Germanium is doped with one part per million with indium at room temperature Calculate the conductivity of doped germanium - Physics - Semiconductor Electronics Materials Devices And Simple Circuits

Question

Germanium is doped with one part per million with indium at room
temperature Calculate the conductivity of doped germanium Given
concentration of Ge atoms = 4 4 * 10 ^ 28 per metre cube Intrinsic
carrier concentration = 2 4 * 10 ^ 19 per metre cube Mobility of
electron and holes are 0 39 metre square per volt per second and 0
19 metre square per volt per second respectively

Ravi Gupta · Accepted Answer

Dear Student
Kindly find the answer of your asked query

number density of holes =nh= 4
4×1028 per m3instrinc number density ni=2
4×1019 per m3number density of electron ne=ni2nh=2
4×1019×2 4×10194 4×1028 ne=1
3×1010 per m3conductivity = eμene+μhnh=1
6×10-190 39×1 3×1010+0 19× 4
4×1028=0 304×109 (ohm meter)-1

Hope this information will clear your doubt about
semiconductors
If you have any doubt do ask on the forum our experts will help you
out